High-Purity Copper Busbar Sputtering Targets (4N-6N)
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High Purity Copper Busbar Sputtering Target – Process & Quality Assurance Statement
Our copper busbar targets are specifically developed for large-area, high-volume physical vapor deposition where uniform coating over extended lengths is critical.
Key process features
Manufacturing employs advanced metallurgical and machining techniques to deliver consistent performance:
●Starting Material: Premium electrolytic copper cathodes with verified ultra-high purity serve as the base.
●Vacuum Refining: Multiple vacuum melting stages remove gaseous and metallic impurities to achieve 4N-6N levels.
●Continuous Casting: Controlled hot extrusion or continuous casting produces long, dense billets with homogeneous structure.
●Hot Working: Forging and rolling refine grain size and achieve near-full theoretical density.
●Precision Cutting & Machining: CNC sawing and milling create accurate rectangular dimensions with parallel faces.
●Surface Preparation: Multi-stage grinding and polishing produce clean, defect-free sputtering surfaces.
●Bonding Options: Low-temperature indium or elastomeric bonding to stainless steel or molybdenum backing plates available.
●Cleanroom Packaging: Final ultrasonic cleaning and double-bagged vacuum sealing ensure contamination-free delivery.
Quality control system
● Complete traceability from cathode source to finished busbar target
● Full material certification and test reports provided with each unit
● Archive samples retained ≥3 years for independent verification (SGS, BV, etc.)
● 100% inspection of essential parameters:
• Purity verification (GDMS/ICP analysis; oxygen typically <5 ppm)
• Density testing (≥99.5% theoretical)
• Grain structure evaluation (metallography)
• Dimensional accuracy (CMM; parallelism ≤0.1mm typical)
• Surface quality and roughness (profilometer + cleanroom inspection)
● Internal specifications surpass ASTM F68 standards. Typical characteristics: Thermal conductivity >395 W/m·K, Consistent arc-free sputtering behavior, High deposition rates in magnetron systems.











